2.0 0.15 4 . 5 0. 1 5 3 . 5 0. 2 2.3 0.15 1. 25 0 . 2 0.203max 0.2 0.05 5. 3 0. 2 ccittk20 4000 10/700 5/310 100 -- vde0433 4000 10/700 5/310 100 -- vde0878 4000 1.2/50 1/20 100 -- iec-1000-4-5 8/20 100 100 -- -- fcc part 68,l ightning surge type a 10/160 10/560 200 100 -- -- fcc part 68,lightning surge type b 100 5/320 5/320 25 -- bellcore tr-nwt-001089 first level 2/10 10/1000 500 100 -- -- bellcore tr-nwt-001089 second level 2/10 500 -- cnet131-24 0.8/310 100 -- schematic diagram ievei 4 ievei 4 10/700 5/310 1.2/50 1500 800 0.5/700 2/10 500 4000 2/10 10/1000 10/160 10/560 2500 1000 complies with the following standards: peak surge voltage (v) necessary resistor ( ) smtpb---series galaxy electrical repetitive peak pulse current:i pp =100a,10/1000 s. the smtpb series are designed for protecting sensitive action.their characteristic response to transien over- transient voltages induced by ac power lines. the devices provide bidirectional protection by crowbar sensitive telecommunication equipment. telecommunication protection features voltages makes them particularly suited to protect volatge holding current:i h =150ma min description breakdown voltage: 62 --- 270 v powe r dissipation: 5.0 w smb bidirectional crowbar protection voltage range:from 62v to 270v. voltage waveform ( s) current waveform ( s) admissible ipp (a) bl galaxy electrical document number 0286006 1. www.galaxycn.com bl telecommunication equipment against lightning and dimensions in millimeters
v i i pp i h i rm i bo v rm v br v bo i r t amb =50 5.0 w 10/1000 s 8/20 s 100 150 tp=20ms 50 a tp=20ms 25 a 2 s v rm 5 kv/ms -55to+150 150 230 symbol value unlt r th (j-l) 20 /w r th (j-a) 75 /w i h c min. note3 max. note4 ma p f 2 56 62 50 82 800 150 300 2 90 100 50 133 800 150 200 symbol v rm i rm v r v br v bo i h i bo i pp c smtpb---series galaxy electrical n ote3: s ee test c i rcu i t 2 . n ote4: v r =1v,f=1mhz,refer to fig.3 for c versus v r . breakover voltage holding current breakover current peak pulse current continuous reverse voltage breakdown voltage capacitance parameter stand-off voltage electrical characteristics (t a =25 ) leakage current at stand-off voltage 2 243 270 50 36 0 800 150 200 smtpb270 2 61 68 50 90 800 150 300 2 108 12 0 50 160 800 150 200 2 117 130 50 173 800 150 200 2 162 18 0 50 240 800 150 200 2 180 20 0 50 267 800 150 200 2 19 8 220 50 293 800 150 200 2 216 240 50 320 800 150 200 smtpb180 smtpb200 smtpb220 SMTPB240 smtpb68 smtpb100 smtpb120 smtpb130 smtpb62 type i rm @ v rm max. a v v bo @ i bo max. note1 note2 v ma parameter junction to leads (l lead =10mm) junction to ambient on printed circuit (l lead =10mm) v r @ i r min. v ma storage temperature range maximum junction temperature maximum lead temperature for soldering during 10s at 5mm form case power dissipation on infinite heatsink peak pulse current non repetitive surge peak on-state current i 2 t vallue for fusing critical rate of rise of off-state voltage i tsm i 2 t dv/dt t stg t j thermal resistances symbol unit value absolute maximum ratings (t a =25 ) p ipp parameter t l bl galaxy electrical document number 0286006 2. www.galaxycn.com bl note1:i r measured at v r guarantees v brmin ?yv r note 2:measured at 50h z (1 cycle)-see test circuit 1. 2/10 s a 500
vout auto transformer 220v/2a static relay. transformer 220v/800v 5a k i bo measure 220v 140 r1 r2 240 d.u.t v bo measure tp=20ms vp d.u.t. r surge generator v bat =-48v ratings and characteristic curves smtpb---series this is a go-no gotest which allows to confirm the holding current (i h ) level in a functionaltest circuit. test procedure : 1) adjust the current level at the ih value by short circuiting the d.u.t. 2) fire the d.u.t with a surge current : ipp = 10a , 10/1000m s. 3) the d.u.t will come back off-state within 50ms max. test circuit 1 for i bo and v bo parameters: test circuit 2 for i h parameter: test procedure : pulse test duration (tp = 20ms): - for bidirectional devices = sw itchk is closed - for unidirectional devices = sw itch k is open. v out selection - device with v bo < 200 volt - v out = 250 v rms , r1 = 140
0 1 2 3 4 5 6 7 8 9 10 1 10 100 t j =25?? v t (v) fig.2 -- relative variation of holding dddd d current versus junction ssss c temperature. ffff fig.3 -- relative variation of junction vvvvvvvv capacitance versus reverse bbbbbbbb applied voltage fig.4 -- on-state current versus on-state yy yyy voltage fig.5 -- transient thermal impedance junction to ambient versus pulse duration ratings and characteristic curves smtpb---series fig.1 -- non repetitive surge peak on-state vvvvvv current versus overload duration vv (t j initial=25c). bl galaxy electrical www.galaxycn.com document number 0286006 4. 30 0 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 f=50h z 60 t(s) i tsm(a) 0.8 0.6 0.2 0.4 0.0 -40 -20 20 060 40 80 100 1.0 1.2 1.4 2.0 1.6 1.8 t j (??) ih[t j ]/ih[t j =25??] 1.0 0.5 0.1 1 100 10 v r (v) 0.2 300 f=1mh z c[v r ]/c[v r =1v] 10 0.1 0.01 0.1 1.0 10 100 1000 5000 1 100 tp(s) zth(j-a)( / w) i t (a)
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